| 1. | Hot electron tunneling mechanism of current collapse in gan hfet
沟道热电子隧穿电流崩塌模型 |
| 2. | In this paper , the coherent transport characteristics of electrons tunneling through a quantum dot are investigated
摘要研究了电子隧穿通过量子点的相干输运特性。 |
| 3. | It is assumed that electron tunneling from silicon into oxide and buildup of interface states are the post - irradiation recovery
假设隧道电子从硅进入氧化层和界面态的建立是辐射效应的恢复机理。 |
| 4. | It shows that the bias in the post - irradiation recovery period and the ratio of the interface state to the electron tunneling influence the recovery rate
模拟结果表明：退火过程所加栅偏压的大小以及隧道电子效应与建立的界面态所占比例的不同影响器件的恢复率。 |
| 5. | The effects of the operation temperatures , gate voltages , drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail . coulomb blockade and single electron tunneling are observed in the devices . 3
详细地分析了工作温度、栅极电压、漏源电压和磁场对其特性的影响，观测到明显的库仑阻塞效应和单电子隧穿效应，器件的工作温度可达到77k以上。 |
| 6. | Transmission coefficient of electron tunneling through rectangular barrier has been calculated based on the exact solution of the one - dimensional time - independent schr ? dinger equation with the transfer matrix method ; furthermore , the dependence of the transmission coefficient on the effective masses and parameters of rectangular barrier also has been studied
摘要利用传递矩阵方法精确计算了一维定态薛定谔方程，求解出电子穿过矩形势垒的透射系数，进一步研究了该透射系数与有效质量和矩形势垒参数的关系。 |
| 7. | We have investigated transport properties of electrons in magnetic quantum structures under an applied constant electric field . the transmission coefficient and current density have been calculated for electron tunneling through structures consisting of identical magnetic barriers and magnetic wells and structures consisting of unidentical magnetic barriers and magnetic wells . it is shown that the transmission coefficient of electrons in a wider nonresonance energy region is enhanced under an applied electric field . the resonance is suppressed for electron tunneling through double - barrier magnetic ( dbm ) structures arranged with identical magnetic barriers and magnetic wells . incomplete resonance at zero bias is changed to complete resonance at proper bias for electron tunneling through dbm structures arranged with different magnetic barriers and magnetic wells . the results also indicate that there exist negative conductivity and noticeable size effect in dbm structures
对磁量子结构中电子在外加恒定电场下的输运性质进行了研究.分别计算了电子隧穿相同磁垒磁阱和不同磁垒磁阱构成的两种磁量子结构的传输概率和电流密度.计算结果表明，在相当宽广的非共振电子入射能区，外加电场下电子的传输概率比无电场时增加.对于电子隧穿相同磁垒磁阱构成的双磁垒结构，共振减弱；对于电子隧穿不同磁垒磁阱构成的双磁垒结构，无电场作用时的非完全共振在适当的偏置电压下转化为完全共振，这时的电子可实现理想的共振隧穿.研究同时表明，磁量子结构中存在着显著的量子尺寸效应和负微分电导 |
